ure, 50 ohm system) IDQ(A+B) = 200 mA Frequency (MHz) 915 Signal Type VSWR Pin (W) Pulse (100 sec, 10% Duty Cycle) > 10:1 at all Phase Angles 15.9 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 6. Ordering Information Device MRF13750HR5 MRF13750HSR5 Tape and Reel Information R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel Package NI--1230H--4S NI--1230S--4S MRF13750H MRF13750HS RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 1.08 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 1000 Coss 100 500 mA 1.04 1.02 750 mA 1000 mA 1 0.98 0.96 10 0.94 Crss 1 VDD = 50 Vdc IDQ(A+B) = 200 mA 1.06 NORMALIZED VGS(Q) C, CAPACITANCE (pF) 10000 0 10 30 20 40 0.92 -50 50 -25 0 25 50 75 100 TC, CASE TEMPERATURE (C) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. IDQ (mA) Slope (mV/C) Figure 2. Capacitance versus Drain--Source Voltage 200 -2.168 500 -1.992 750 -1.903 1000 -1.854 Figure 3. Normalized VGS versus Quiescent Current and Case