MRF137/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF137 N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver stages up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency -- 60% (Typical) 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET * Small-Signal and Large-Signal Characterization * Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain LIFETIME BUY * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 1.5 dB (Typ) at 1.0 A, 150 MHz * Excellent Thermal Stability, Ideally Suited For Class A Operation D * Facilitates Manual Gain Control, ALC and Modulation Techniques G CASE 211-07, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 10
MRF137/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver stages up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency -- 60% (Typical) 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET * Small-Signal and Large-Signal Characterization * Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 1.5 dB (Typ) at 1.0 A, 150 MHz * Excellent Thermal Stability, Ideally Suited For Class A Operation D * Facilitates Manual Gain Control, ALC and Modulation Techniques G CASE 211-07, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 100 0.571 Watts W/C Storage Temperature Range Tst
MRF137 The RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal output and drive stages up to 400 MHz range. Rev. V2 Product Image N-Channel enhancement mode * Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency -- 60% (Typical) * Small- and large-signal characterization * Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain * 100% tested for load mismatch at all phase angles with 30:1 VSWR * Low noise figure -- 1.5 dB (typ.) at 1.0 A, 150 MHz * Excellent thermal stability, ideally suited for Class A operation * Facilitates manual gain control, ALC and modulation techniques Maximum Ratings 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MRF137 The RF MOSFE
ransistors are capable of CW or pulse power in narrowband operation. Typical Performance: VDD = 50 Vdc Signal Type Pout (W) 915 (1) CW 750 19.3 67.1 915 (2) Pulse (100 sec, 10% Duty Cycle) 850 20.4 71.0 1300 CW 700 18.0 56.0 Frequency (MHz) Gps (dB) D (%) MRF13750H MRF13750HS PREPRODUCTION 700-1300 MHz, 750 W CW, 50 V RF POWER LDMOS TRANSISTORS Load Mismatch/Ruggedness Frequency (MHz) 915 (2) Signal Type VSWR Pin (W) Test Voltage Pulse (100 sec, 20% Duty Cycle) > 10:1 at all Phase Angles 15.9 Peak (3 dB Overdrive) 50 Result NI--1230H--4S MRF13750H No Device Degradation 1. Measured in 915 MHz reference circuit (page 4). 2. Measured in 915 MHz narrowband production test fixture (page 7). Features Internally input matched for ease of use Device can be used single--ended or in a push--pull configuration Characterized for 30 to 50 V for ease of use Suitable for linear applications with appropriate biasing Integrated ESD protection Recommended driver: MRFE6VS25GN (25 W) Includ
MRF13750H Rev. 1, 01/2018 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Typical Performance: VDD = 50 Vdc Signal Type Pout (W) 915 (1) CW 750 19.3 67.1 915 (2) Pulse (100 sec, 10% Duty Cycle) 850 20.5 69.2 1300 (3) CW 700 17.2 56.0 Frequency (MHz) Gps (dB) D (%) MRF13750H MRF13750HS 700-1300 MHz, 750 W CW, 50 V RF POWER LDMOS TRANSISTORS Load Mismatch/Ruggedness Frequency (MHz) 915 (2) Signal Type VSWR Pin (W) Test Voltage Pulse (100 sec, 10% Duty Cycle) > 10:1 at all Phase Angles 15.9 Peak (3 dB Overdrive) 50 Result NI--1230H--4S MRF13750H No Device Degradation 1. Measured in 915 MHz narrowband reference circuit (page 5). 2. Measured in 915 MHz narrowband production test fixture (page 11). 3. Measured in 1300 MHz narrowband
MRF137 The RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal output and drive stages up to 400 MHz range. Rev. V2 Product Image N-Channel enhancement mode * Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency -- 60% (Typical) * Small- and large-signal characterization * Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain * 100% tested for load mismatch at all phase angles with 30:1 VSWR * Low noise figure -- 1.5 dB (typ.) at 1.0 A, 150 MHz * Excellent thermal stability, ideally suited for Class A operation * Facilitates manual gain control, ALC and modulation techniques Maximum Ratings 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MRF137 The RF MOSFE
MRF137/D SEMICONDUCTOR TECHNICAL DATA N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver stages up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency -- 60% (Typical) 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET ARCHIVE INFORMATION * Small-Signal and Large-Signal Characterization * Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 1.5 dB (Typ) at 1.0 A, 150 MHz * Excellent Thermal Stability, Ideally Suited For Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques CASE 211-07, STYLE 2 & MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 100 0.571 Watts W/C Storage Temperature Range Tstg -
zation Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure 1.5 dB (Typ) at 1.0 A, 150 MHz Excellent Thermal Stability, Ideally Suited For Class A Operation MRF137 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET Facilitates Manual Gain Controi, ALC and Modulation p Techniques oF CASE 211-07, STYLE 2 MAXIMUM RATINGS s Rating Symbo! Value Unit Drain-Source Voitage Vpss 65 Vdc DrainGate Voltage Vocr 65 Vde (Reg = 1.0 MQ) GateSource Voltage Vas +40 Vde Drain Current Continuous lo 5.0 Adc Total Device Dissipation @ Tc = 25C Po 100 Watts Derate above 25C 0.571 Wr Storage Temperature Range Tstg ~65 to +150 C Operating Junction Temperature Ty 200 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Resc 1.75 CIW Handting and Packaging - MOS devices are susceptible io damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices
MRF137 | The RF MOSFET Line | 30W 2.0-400 MHz N-CHANNEL ENHANCEMENT-MODE -CHANN RF POWER FIELD-EFFECT TRANSISTOR N- CHANNEL MOS BROADBAND RF POWER . designed for wideband large-signal output and driver stages in the 2.0 to 400 MHz range FET @ Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 d8 Efficiency = 60% (Typical) Small-Signai and Large-Signal Characterization @ Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain @ 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR @ Low Noise Figure 1.5 dB (Typ) at 1.0 A, 150 MHz @ Excellent Thermal Stability, Ideally Suited for Class A Operation @ Facilitates Manual Gain Control, ALC and Modulation Techniques Oo STYLE 2 PIN 1 SOURCE A 2. GATE u~ 3. SOURCE M an 4 DRAIN G a-. ? fs M ; ty S +} x EG} - 4 R B \ af NY MAXIMUM RATINGS N yo. Rating Symbol Value Unit s y 7 - Drain-Source Voltage Voss 65 Vde J NX Drain-Gate Voltage VoGa 65 Vdc 1 | (Rgs = 1.0 MQ) _| H t scare Gate-Source Voltage Ves +40 Vd
MRF137 .., designed for wideband large-signal output and driver stages up to 400 MHz range. e Guaranteed 28 Voit, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 cB 30 W, to 400 MHz Efficiency 60% (Typical) N-CHANNEL MOS e Small-Signal and LargeSignai Characterization Bao e eer rower e Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain e 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR e Low Noise Figure 1.5 dB (Typ) at 1.0 A, 150 MHz e Excellent Thermal Stability, Ideally Suited For Class A Operation e Facilitates Manual Gain Control, ALC and Modulation F Techniques OQ |} co I CASE 211-07, STYLE 2 MAXIMUM RATINGS 8 Rating Symbol Value Unit Drain-Source Voltage Voss 65 Vdc DrainGate Vollage VoGR 65 Vdc (Res = 1.0 MQ) Gate-Source Voltage ets +40 Vde Drain Current Continuous Ip 5.0 Adc Total Device Dissipation @ Tc = 25C Pp 100 Watts Derate above 25 'C 0.571 Wi C Storage Temperature Range Tstg 65 to +150 Operating Junction Temperature Ty 200 "Cc THERMAL
al data sheets and product information. For further information and support please visit: https://www.macom.com/support MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V Rev. V1 RF POWER MOSFET CONSIDERATIONS DESIGN CONSIDERATIONS The MRF137 is a RF power N-Channel enhancementmode field-effect transistor (FET) designed especially for VHF power amplifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V-groove vertical power FETs. M/A-COM Application Note AN211A, FETs in Theory andPractice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitat
MRF137 The RF MOSFET Line 30W, to 400MHz, 28V M/A-COM Products Released - Rev. 05202009 Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. N-Channel enhancement mode * Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency -- 60% (Typical) * Small- and large-signal characterization * Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain * 100% tested for load mismatch at all phase angles with 30:1 VSWR * Low noise figure -- 1.5 dB (typ.) at 1.0 A, 150 MHz * Excellent thermal stability, ideally suited for Class A operation * Facilitates manual gain control, ALC and modulation techniques 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements.
MRF137 The RF MOSFET Line 30W, to 400MHz, 28V M/A-COM Products Released - Rev. 01302012 Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. N-Channel enhancement mode * Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency -- 60% (Typical) * Small- and large-signal characterization * Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain * 100% tested for load mismatch at all phase angles with 30:1 VSWR * Low noise figure -- 1.5 dB (typ.) at 1.0 A, 150 MHz * Excellent thermal stability, ideally suited for Class A operation * Facilitates manual gain control, ALC and modulation techniques Maximum Ratings 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototyp
MRF137/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver stages up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency -- 60% (Typical) 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET * Small-Signal and Large-Signal Characterization * Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 1.5 dB (Typ) at 1.0 A, 150 MHz * Excellent Thermal Stability, Ideally Suited For Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques CASE 211-07, STYLE 2 & MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 100 0.571 Watts W/C Storage Temperature Range Tstg -6
MRF137 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . .. designed for wideband large-signal output and driver stages up to 400 MHz range. 30 W, to 400 MHz e Guaranteed 28 Volt, 150 MHz Performance N-CHANNEL MOS Output Power = 30 Watts BROADBAND RF POWER Minimum Gain = 13 dB Efficiency 60% (Typical) Small-Signal and Large-Signal Characterization Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR Low Noise Figure 1.5 dB (Typ) at 1.0 A, 150 MHz D Excellent Thermal Stability, Ideally Suited For Class A Operation e Facilitates Manual Gain Control, ALC and Modulation Techniques G CASE 211-07, STYLE 2 MAXIMUM RATINGS s Rating Symbol Value Unit Drain-Source Voltage Vpss 65 Vde Drain-Gate Voltage VDGR 65 Vde (Rag = 1.0 MQ) Gate-Source Voltage Vas +40 Vde Drain Current -~ Continuous Ip 5.0 Adc Total Device Dissipation @ Tc = 25C Pp 100 Watts Derate above 25C 0.871 wre Storage Temperature Range Tstg 65 to +150 c O