22ET1 BZX84C22ET3 BZX84C3V0ET1 BZX84C3V6ET1 BZX84C3V9ET1 BZX84C3V9LT1G BZX84C30ET1 BZX84C33ET1 BZX84C36ET1 BZX84C36ET3 BZX84C39ET1 BZX84C4V3ET1 BZX84C43ET1 BZX84C51ET1 BZX84C56ET1 BZX84C6V2ET1G BZX84C6V8LT1G BZX84C62ET1 BZX84C62ET3 BZX84C68ET1 BZX84C68ET3 BZX84C75ET1 BZX84C75LT1G BZX84C8V2ET1 BZX84C8V2ET3 BZX84C9V1ET1 BZX84C9V1ET3 CS5201-1GSTR3G CS5253B-8GDP5G CS8101YDWFR20G CS8101YDWF20G C106D1G JLC1562BNG LM201AVDR2 LM224DR2G LM239DR2G LM2575TV-ADJG LM2575TV-005G LM2576D2T-005G LM2576D2TR4-3.3G LM2576TV-ADJG LM258DR2G LM2901DR2G LM2901VDG LM2901VDR2G LM2902DR2G LM2903VDG LM2903VDR2G LM2904DMR2G LM2904DR2G LM2904VDG LM293DR2G LM311DG LM317LDR2G LM317TG LM324ADR2G LM324ANG LM339DG LM339NG LM358DMR2G LP2951CD-3.0R2G MAX809STRG MAX810LTRG MAX810STRG MBRA160T3G MBRB1545CTT4G MBRB20200CTT4G MBRB2515LG MBRB2545CTT4G MBRD340G MBRD340T4G MBRD360T4G MBRD620CTT4G MBRD835LG MBRM120ET1G MBRM130LT1G MBRM130LT3G MBRS120T3G MBRS1540T3G MBRS260T3G MBRS3200T3 MBR0540T3G MBR1060G MBR130T1G MBR1535CTG MBR16100CTG
3 35 80 BZX84C36ET1G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1G BD4 37 39 41 130 36.7 41 BZX84C43ET1G BK6 40 43 46 150 39.7 BZX84C47ET1G BD5 44 47 50 170 BZX84C51ET1G BD6 48 51 54 BZX84C56ET1G BZX84C62ET1G BD7 52 56 BD8 58 62 BZX84C68ET1G BD9 64 BZX84C75ET1G BE1 70 Device* Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Belo
3 35 80 BZX84C36ET1G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1G BD4 37 39 41 130 36.7 41 BZX84C43ET1G BK6 40 43 46 150 39.7 BZX84C47ET1G BD5 44 47 50 170 BZX84C51ET1G BD6 48 51 54 BZX84C56ET1G BZX84C62ET1G BD7 52 56 BD8 58 62 BZX84C68ET1G BD9 64 BZX84C75ET1G BE1 70 Device* Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Belo
ET1, G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1, G BD4 37 39 41 130 36.7 41 BZX84C43ET1, G BK6 40 43 46 150 39.7 BZX84C47ET1, G BD5 44 47 50 170 BZX84C51ET1, G BD6 48 51 54 BZX84C56ET1, G BZX84C62ET1, G BD7 52 56 BD8 58 62 BZX84C68ET1, G BD9 64 BZX84C75ET1, G BE1 70 Device Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Bel
C36ET1, G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1, G BD4 37 39 41 130 36.7 41 BZX84C43ET1, G BK6 40 43 46 150 39.7 BZX84C47ET1, G BD5 44 47 50 170 BZX84C51ET1, G BD6 48 51 54 BZX84C56ET1, G BD7 52 56 BZX84C62ET1, G BD8 58 BZX84C68ET1, G BD9 64 BZX84C75ET1, G BE1 70 Device Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3
.com 32 3000 10000 1 = Mature, Stable, High-Volume Device 2 = Moderate-Volume Device 3 = Low-Volume Device COMMERCIAL COMPONENTS EFFECTIVE DATE: OCTOBER 9, 2004 Type No. Per Unit Suggested Resale Price PC Qty Price Grp/Description Minimum Package Quantity BZX84C75ET1 A ZENER DIODE, MINIBLOC 2 3000 .0693 BZX84C75LT1 A ZEN SOT23 REG .225W 75V 2 3000 .0533 3000 BZX84C75LT1G A ZEN SOT23 REG .225W 75V 2 3000 .0533 3000 BZX84C75LT3 A ZEN SOT23 REG .225W 75V 2 10000 .0533 10000 BZX84C8V2ET1 A ZENER DIODE, MINIBLOC 2 3000 .0693 3000 BZX84C8V2ET3 A ZENER DIODE MINIBLOC 2 10000 .0693 10000 BZX84C8V2LT1 A ZEN SOT23 REG .225W 8.2V 2 3000 .0533 3000 BZX84C8V2LT1G A ZEN SOT23 REG .225W 8.2V 2 3000 .0533 3000 BZX84C8V2LT3 A ZEN SOT23 REG .225W 8.2V 2 10000 .0533 10000 BZX84C9V1ET1 A ZENER DIODE, MINIBLOC 2 3000 .0693 3000 BZX84C9V1ET3 A ZENER DIODE MINIBLOC 2 10000 .0693 10000 BZX84C9V1LT1 A ZEN SOT23 REG .225W 9.1V 2 3000 .0533 3000 BZX84C9V1LT1G A ZEN SOT23 REG .225W 9.1V 2 3000 .0533 3000 BZX84C9V1LT3 A ZEN
T1 BD2 31 33 35 80 BZX84C36ET1 BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1 BD4 37 39 41 130 36.7 41 BZX84C43ET1 BK6 40 43 46 150 39.7 BZX84C47ET1 BD5 44 47 50 170 BZX84C51ET1 BD6 48 51 54 BZX84C56ET1 BD7 52 56 BZX84C62ET1 BD8 58 BZX84C68ET1 BD9 64 BZX84C75ET1 BE1 70 Device Min Max VZ3 Below @ IZT3 = 10 mA ZZT3 Below @ IZT3 = 10 mA Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA
00 28.1 35 325 31.1 BZX84C36ET1G BD3 34 36 38 90 33.8 38 350 BZX84C39ET1G BD4 37 39 41 130 36.7 41 BZX84C43ET1G BK6 40 43 46 150 39.7 BZX84C47ET1G BD5 44 47 50 170 BZX84C51ET1G BD6 48 51 54 BZX84C56ET1G BZX84C62ET1G BD7 52 56 BD8 58 62 BZX84C68ET1G BD9 64 BZX84C75ET1G BE1 70 Device* Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Below @ I
3 35 80 BZX84C36ET1G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1G BD4 37 39 41 130 36.7 41 BZX84C43ET1G BK6 40 43 46 150 39.7 BZX84C47ET1G BD5 44 47 50 170 BZX84C51ET1G BD6 48 51 54 BZX84C56ET1G BZX84C62ET1G BD7 52 56 BD8 58 62 BZX84C68ET1G BD9 64 BZX84C75ET1G BE1 70 Device* Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Belo
C36ET1, G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1, G BD4 37 39 41 130 36.7 41 BZX84C43ET1, G BK6 40 43 46 150 39.7 BZX84C47ET1, G BD5 44 47 50 170 BZX84C51ET1, G BD6 48 51 54 BZX84C56ET1, G BD7 52 56 BZX84C62ET1, G BD8 58 BZX84C68ET1, G BD9 64 BZX84C75ET1, G BE1 70 Device Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3