BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features * * * * * * 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 2 1 G2 D G1 S Applications Electrostatic sensitive device. Observe precautions for handling. Input- and mixer stages especially UHF-tuners. 13625 Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part Ordering Ccode Marking Package BF966S BF966SA or BF966SB BF966S TO50 BF966SA BF966SA BF966S TO50 BF966SB BF966SB BF966S TO50 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Tamb 60 C Symbol Valu
BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features * * * * * * * * 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance Low input capacitance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 G2 D G1 S Electrostatic sensitive device. Observe precautions for handling. Applications Mechanical Data Input- and mixer stages especially UHF-tuners. Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 13625 Parts Table Part Ordering Ccode Marking Package BF966S BF966SA or BF966SB BF966S TO50 BF966SA BF966SA BF966S TO50 BF966SB BF966SB BF966S TO50 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition
BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features * * * * * * * * 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance Low input capacitance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 G2 D G1 S Electrostatic sensitive device. Observe precautions for handling. Applications Mechanical Data Input- and mixer stages especially UHF-tuners. Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 13625 Parts Table Part Ordering Ccode Marking Package BF966S BF966SA or BF966SB BF966S TO50 BF966SA BF966SA BF966S TO50 BF966SB BF966SB BF966S TO50 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition
BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 2 4 1 BF966S Marking: BF966S Plastic case (TO 50) 1 Drain; 2 Source; 3 Gate 1; 4 Gate 2 + + + + Absolute Maximum Ratings Parameters Drain source voltage Drain current Gate 1/Gate 2-source peak current Total power dissipation Tamb 60C Channel temperature Storage temperature range v Symbol VDS ID IG1/2SM Ptot TCh Tstg Value 20 30 10 200 150 -55 to +150 Unit V mA mA mW C C Symbol Maximum Unit RthChA 450 K/W Maximum Thermal Resistance Parameters Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 23-Jan-97 1 (6) BF966S Electrical DC Ch
BF966S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure D High AGC-range D Low feedback capacitance D Low input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 S 12623 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Tamb 60 C Symbol Value VDS 20 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA mW C C Symbol RthChA Unit K/W Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass f
BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 D High AGC-range D Low feedback capacitance D Low input capacitance G2 D 4 2 G1 94 9307 96 12647 1 BF966S Marking: BF966S Plastic case (TO 50) 1 Drain; 2 Source; 3 Gate 1; 4 Gate 2 + + + + S 12623 Absolute Maximum Ratings Parameters Drain source voltage Drain current Symbol Value Unit VDS 20 V ID 30 mA IG1/2SM 10 mA Ptot 200 mW Channel temperature TCh 150 C Storage temperature range Tstg -55 to +150 C Symbol Maximum Unit RthChA 450 K/W Gate 1/Gate 2-source peak current Total power dissipation Tamb v 60C Maximum Thermal Resistance Parameters Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 23-Jan-97 1 (8)
BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure D High AGC-range D Low feedback capacitance D Low input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 S 12623 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Tamb 60 C Symbol Value VDS 20 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA mW C C Symbol RthChA Unit K/W Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on gla
BF966S Vv Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. A Observe precautions for handling. sed Applications Input- and mixer stages especially UHF-tuners. Features @ Integrated gate protection diodes @ High AGC-range @ High cross modulation performance @ Low feedback capacitance e Low noise figure @ Low input capacitance 3 G, | OD 4 I ; Gio | A 96 12681 94.9307 1 BF966S Marking: BF966S Plastic case (TO 50) 12623 Os 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 Absolute Maximum Ratings Tamb = 25C, unless otherwise specified Drain - source voltage Vos 20 Vv Drain current Ip 30 mA Gate 1/Gate 2 - source peak current +lg1/G2SM 10 mA Total power dissipation Tamb < 60 C Prot 200 mW Channel temperature Toh 150 C Storage temperature range Tstq 55 to +150 C Maximum Thermal Resistance Tamb = 25C, unless otherwise specified Channel ambient | on glass fibre printed board (40 x 25 x 1.5) mm? Rthcha 450 KAW plated with 35um Cu D
BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features * * * * * * 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 2 1 G2 D G1 S Applications Electrostatic sensitive device. Observe precautions for handling. Input- and mixer stages especially UHF-tuners. 13625 Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Tamb 60 C Symbol Value VDS 20 Unit V ID 30 mA IG1/G2SM 10 mA Ptot 200 mW Channel temperature TCh 150 C Storage temperature range Tstg - 55 to + 150 C Symbol Value Unit RthChA 450 K/W Maximum Thermal Resistance Parameter Channel ambient 1) Test condition 1) on gl
BF966S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure D High AGC-range D Low feedback capacitance D Low input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 S 12623 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Tamb 60 C Symbol Value VDS 20 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA mW C C Symbol RthChA Unit K/W Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass f
BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features * * * * * * 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 2 1 G2 D G1 S Applications Electrostatic sensitive device. Observe precautions for handling. Input- and mixer stages especially UHF-tuners. 13625 Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Tamb 60 C Symbol Value VDS 20 Unit V ID 30 mA IG1/G2SM 10 mA Ptot 200 mW Channel temperature TCh 150 C Storage temperature range Tstg - 55 to + 150 C Symbol Value Unit RthChA 450 K/W Maximum Thermal Resistance Parameter Channel ambient 1) Test condition 1) on gl
BF966S TEMIC Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input- and mixerstages especially for UHF-tuners. Features @ Integrated gate protection diodes High cross modulation performance @ Low noise figure Electrostatic sensitive device. Observe precautions for handling. Aid @ High AGC-range @ Low feedback capacitance @ Low input capacitance G0 | OD Gio | 94 9307 96 12647 1 BF9668 Marking: BF966S OSs Plastic case (TO 50) 12623 | =Drain; 2= Source; 3 = Gate 1; 4= Gate 2 Absolute Maximum Ratings oso Parameters Symbol Vale Unit Drain source voltage Vps 20 Vv Drain current Ip 30 mA Gate 1/Gate 2-source peak current ~ Hoinsm | 10 mA Total power dissipation Tamp = 60C Prot 200 mW Channel temperature ' Teh 150 C Storage temperature range Test ~55 to +150 C Maximum Thermal Resistance Parameters. - | Symbol | Maximum Unit Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm? plated with 35 um Cu Rihcna 450 K/W 52 TELEFUNKEN Semiconductors
BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features * * * * * * 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 2 1 G2 D G1 S Applications Electrostatic sensitive device. Observe precautions for handling. Input- and mixer stages especially UHF-tuners. 13625 Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Tamb 60 C Symbol Value VDS 20 Unit V ID 30 mA IG1/G2SM 10 mA Ptot 200 mW Channel temperature TCh 150 C Storage temperature range Tstg - 55 to + 150 C Symbol Value Unit RthChA 450 K/W Maximum Thermal Resistance Parameter Channel ambient 1) Test condition 1) on gl
Characteristics Part Vos | Ipmax ly2isl at Ips Gps and F at f Cissgi and at f | Ipss at Vps | Number v mA mS mA | dB dB MHz pF MHz mA Vv Package BF961 20 30 1S 10 20 1.8 200 3.7 ] 4to 20 15 TOSO (4) BF964S 20 30 18.5 10 25 1.0 200 2.5 ] 4to 18 15 TOSO (4) BF966S 20 30 [8.5 10 18 1.8 800 2.2 ] 4to 18 15 TOS0 (4) BF988 12 30 24 10 20 1.6 800 2.1 1 4to 18 8 TOSO (4) BF994S 20 30 18.5 10 25 1.0 200 2.5 i 4to 18 15 SOT143 BF995 20 30 1S 10 20 1.8 200 3.7 1 4to 18 15 SOT 143 BF996S 20 30 18.5 10 18 2.0 800 2.2 1 4to 18 1S SOT143 BF998 12 30 24 10 20 1.5 800 2.) 1 4to 18 8 SOT143 $525T 20 30 16 10 25 1.0 200 2.2 1 Sto 14 10 SOT23 S888T 10 20 24 7 20 13 800 L9 1 | to 12 5 SOT143 MOSMICs (MOS Monolithic Integrated Circuit) ElectricalCharacteristics Part Vpsmax | Tomax | ly2is! at Ips Gps and F at f Cissgh and at f | Ipsp at Vps Number Vv mA ms dB dB MHz pF MHz mA Vv Package $593T 8 30 40 23 .3 800 3.2 I 9to 18 5 SOT143 $594T 8 20 24 20 1.3 800 24 l 7Tto 14 5 SOT143 $595T 8 20 30 20 1.3 800 2.3 Il 8 to 16
B) MHz fF Appl BF960 SOT-103 20 2-20 3.5 12 2.8 16.5 800 25 UHF BF964 SOT-103 20 2-20 2.5 17 1.5 25 200 25 VHF BF964S | SOT-103 20 4-20 2.5 18 1.0 25 200 25 VHF BF965 SOT-103 20 2-20 2.5 18min 1 25 200 25 VHF BF966 SOT-103 20 2-20 2.5 17 2.8 18 800 25 UHF BF966S | SOT-103 20 4-20 2.5 18 1.8 18 800 25 UHF .. continued Philips Components Discrete Semiconductor Group e 100 Providence Pike, Slatersville, Rl 02876 Tel. (401) 762-3800