BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices Applications Power linear and switching Description 1 The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitte-base voltage (IC = 0) 5 V Collector current 6 A Collector peak current (tP < 5ms) 10 A Base current 2 A PTOT Total dissipation at Tc = 25C 65 W Tstg Storage temperature -65 to 150 C 150 C ICM IB T
BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * Collector - Emitter Saturation Voltage - * * * http://onsemi.com VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Vdc 5.0 Vdc IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25C PD 65 0.52 W W/_C TJ, Tstg -65 to +150 _C Symbol Max Un
BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features http://onsemi.com 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS *Collector - Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc *Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C *High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc *Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Vdc 5.0 Vdc IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C TJ, Tstg -65 to +150 C Symbol Max Unit RqJC 1.9
BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B * Collector - Emitter Saturation Voltage -- BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- * * VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B = 100 Vdc (Min) -- BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package *ON Semiconductor Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIII
BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * High Current Gain Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Symbol Value Unit VCEO 80 100 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 6 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C -65 to +150 C Collector Current - Peak Operating and Storage Junction Temperature Range NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Vdc 80 100 TJ, Tstg PNP Vdc Collector-Base Voltage BD243B, BD244B BD243C, BD244C Collector Current - Continuous www.onsemi.com EMITTER 3 4 TO-220 CASE 221A STYLE 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the de
BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices Applications ) s ( ct Power linear and switching u d o Description 1 2 3 r P e TO-220 The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. t e l o Figure 1. ) (s Internal schematic diagram s b O t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter BD243C (NPN) Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitte-base voltage (IC = 0) 5 V Collector current 6 Collector peak current (tP < 5ms) 10 Base current 2 ICM IB PTOT Total dissipatio
B BD241B BD241B BD241C BD242B BD242B 3-873 3-174 3-174 3-174 3-174 3-174 3-174 BD385 BD385-1 BD385-2 BD385-5 BD385-8 BD386 BD386-1 MJE181 MJE181 MJE181 MJE181 MJE181 MJE171 MJE171 3-589 3-589 3-589 3-589 3-589 3-589 3-589 BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD242B BD242C BD243B BD243B BD243B BD243C BD244B 3-174 3-174 3-178 3-178 3-178 3-178 3-178 BD386-2 BD386-5 BD386-8 BD387 BD387-1 BD387-2 BD387-5 MJE171 MJE171 MJE171 MJE182 MJE182 MJE182 MJE182 3-589 3-589 3-589 3-589 3-589 3-589 3-589 BD244A BD244B BD244C BD249C BD250C BD262 BD262A BD244B BD244B BD244C BD249C BD250C BD678 BD680 3-178 3-178 3-178 -- -- 3-190 3-190 BD387-8 BD388 BD388-1 BD388-2 BD388-5 BD388-8 BD389 MJE182 MJE172 MJE172 MJE172 MJE172 MJE172 MJE243 3-589 3-589 3-589 3-589 3-589 3-589 3-596 Index and Cross Reference 1-14 Motorola Bipolar Power Transistor Device Data INDEX AND CROSS REFERENCE (continued) Industry Part Number Motorola Nearest Replacement Motorola Similar Replacement Page Number Industry Part
alic are ON Semiconductor preferred devices. http://onsemi.com 9 Plastic TO-220AB (continued) Device Type @ IC Amp 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 TIP42B 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 BD244B 15 min 3.0 0.4 typ 0.15 typ 3.0 3.0 65 162 BD243C BD244C 15 min 3.0 0.4 typ 0.15 typ 3.0 3.0 65 162 TIP41C TIP42C 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 6.0 60 TIP41A TIP42A 80 TIP41B BD243B 7.0 NPN PNP 400/700 BUL146 14/34 0.5 1.75 (Note 10.) 0.15 (Note 10.) 3.0 14 typ 100 450/1000 MJE18006 14/34 0.5 3.2 (Note 10.) 0.13 (Note 10.) 3.0 14 typ 100 30 2N6288 50 8.0 @ IC Amp PD (Case) Watts @ 25C hFE Min/Max VCEO(sus) Volts Min (Note 11.) tf s Max fT MHz Min ts s Max ICCont Amps Max 100 Resistive Switching Page 263 531 2N6111 30/150 3.0 0.4 typ 0.15 typ 3.0 4.0 40 107 2N6109 30/150 2.5 0.4 typ 0.15 typ 3.0 4.0 40 107 2N6107 30/150 2.0 0.4 typ 0.15 typ 3.0 4.0 40 107 70 2N6292 150 BU407 30 min 1.5 0.75 5.0 10 60 214 200 BU406 30 min 1.5 0.75 5.0 10 60 214 60 2N6043 (Note 9.) 2N6040 (Note
BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage - * * http://onsemi.com VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage BD243B, BD244B BD243C, BD244C Emitter-Base Voltage VCB Value Unit TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100 1 Vdc 80 100 2 3 VEB 5.0 Vdc IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C BD24xyG TJ, Tstg -65 to +150 C AY WW S
BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. * Collector - Emitter Saturation Voltage -- VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B VCEO(sus) = 100 Vdc (Min) -- BD243C, BD244C * High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package *Motorola Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 - 100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III III
BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B * Collector - Emitter Saturation Voltage -- BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- * * VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B = 100 Vdc (Min) -- BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package *ON Semiconductor Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIII
BD243C NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD243 Collector-emitter voltage (RBE = 100 ) Collector-emitter voltage (IC = 30 mA) BD243A BD243B VALUE VCER 70 90 BD243C 115 BD243 45 BD243A BD243B UNIT 55 VCEO BD243C 60 80 V V 100 V EBO 5 V IC 6 A ICM 10 A IB 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC 2 62.5 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 250 C Emitter-base voltage Continuous collec
istors . .. designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vde (Max) @ Ic = 6.0 Ade Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vde (Min) BD243B, BD244B = 100 Vde (Min) BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ Ic = 500 mAdc Compact TO-220 AB Package MAXIMUM RATINGS NPN BD243B BD243C* PNP BD244B BD244c* *Motorola Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS F CASE 221A-06 TO-220AB BD243B BD243C Rating Symbol BD244B BD244C Unit Collector-Emitter Voltage VCEO 80 100 Vde CollectorBase Voltage VCB 80 100 Vde Emitter-Base Voltage VEB 5.0 Vde Collector Current Continuous Io 6 Adc Peak 10 Base Current IB 2.0 Adc Total Device Dissipation PD Watts @Tc=25C 65 Derate above 25C 0.52 wee Operating and Storage Junction TJ: Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resista
BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 @ Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Cc C) Customer-Specified Selections Available Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD243 55 . BD243A 70 Collector-emitter voltage (Rag = 100 Q) BD243B VceR 90 Vv BD243C 115 BD243 45 . BD243A 60 Collector-emitter voltage (l = 30 mA) BD243B VcEo 80 Vv BD243C 100 Emitter-base voltage VeBo 5 Vv Continuous collector current lo 6 A Peak collector current (see Note 1) lom 10 A Continuous base current lp 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 65 Ww Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * High Current Gain Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Symbol Value Unit VCEO 80 100 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 6 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C -65 to +150 C Collector Current - Peak Operating and Storage Junction Temperature Range NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Vdc 80 100 TJ, Tstg PNP Vdc Collector-Base Voltage BD243B, BD244B BD243C, BD244C Collector Current - Continuous www.onsemi.com EMITTER 3 4 TO-220 CASE 221A STYLE 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the de