oshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba A:Nearest, B:Different Package Power MOSFETs Cross Reference Part Number 2SK2350 2SK2376 2SK2381 2SK2382 2SK2385 2SK2389 2SK2391 2SK2398 2SK2399 2SK2400 2SK2401 2SK2417 2SK2440 2SK2441 2SK2442 2SK2445 2SK2466 2SK2493 2SK2507 2SK2508 2SK2542 2SK2543 2SK2544 2SK2545 2SK2549 2SK2550 2SK2551 2SK2556 2SK2557 2SK2598 2SK2599 2SK2600 2SK2601 2SK2602 2SK2603 2SK2604 2SK2605 2SK2606 2SK2607 2SK2608 2SK2610 2SK2611 2SK2613 2SK2614 2SK2615 2SK2637 2SK2661 2SK2662 2SK2679 2SK2698 Revised 1Q '99 VDSS (V) 200 60 200 200 60 700 100 60 100 100 200 250 20 20 30 60 100 16 50 250 500 500 600 600 16 50 50 30 30 250 500 500 500 600 800 800 800 800 800 900 900 900 1000 50 60 20 500 500 400 500 RDS(ON) (ohm) 0.4 0.017 0.8 0.18 0.03 1.7 0.085 0.03 0.23 0.23 0.18 0.5 0.038 0.032 0.029 0.018 0.046 0.1 0.046 0.25 0.85 0.85 1.25 1.25 0.29 0.03 0.011 0.04 0.037 0.25 3 0.85 1 1.25 3.6 2.2 2.2 1.2 1.2 4.3 2.5 1.4 1.7 0.046 0.
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.) Unit: mm z Low leakage current : IDSS = 100 A (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V (Note 1) ID 15 A Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Drain current DC JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/cu
2SK2401 NMOS (-MOSV) 2SK2401 DC-DC : mm * * : |Yfs| = 17 S () * * : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) : RDS (ON) = 0.13 () : IDSS = 100 A () (VDS = 200 V) (Ta = 25C) * VDSS 200 V *(RGS = 20 k) VDGR 200 V * VGSS 20 V ( 1) ID 15 ( 1) IDP 45 (Tc = 25C) PD 75 W () ( 2) EAS 166 mJ IAR 15 A () ( 3) EAR 7.5 mJ Tch 150 C Tstg -55~150 C DC A JEDEC JEITA 2-10S1B : 1.5 g () (//) (/ ) ( ) ( ) : * 1: * Rth (ch-c) 1.67 C/W Rth (ch-a) 83.3 C/W 150C 2: () VDD = 50 V, Tch = 25C (), L = 1.2 mH, RG = 25 , IAR = 15 A 3: JEDEC JEITA 2-10S2B : 1.5 g () MOS 1 2009-09-29 2SK2401 (Ta = 25C) IGSS VGS = 16 V, VDS = 0 V 10 A IDSS VDS = 200 V, VGS = 0 V 100 A ID = 10 mA, VGS = 0 V 200 V * V (BR) DSS Vth VDS = 10 V, ID = 1 mA 1.5 3.5 V * RDS (ON) VGS = 10 V, ID = 10 A 0.13 0.18 |Yfs| VDS = 10 V, ID = 10 A 10 17 S Ciss 2000 pF Crss 200 pF Coss 600 pF tr 35 50 VDS = 10 V, VGS = 0 V, f = 1 MHz ID = 10 A 10 V VGS 4.7 ton tf toff Qg * Qgs * Qgd ns 10 66 40 nC 25 nC 15 nC VDD 100 V RL = 10 0V Duty 1%
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.) Unit: mm z Low leakage current : IDSS = 100 A (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V ID 15 A IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Drain current DC (Note 1) Pulse (Note 1) JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/cu
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Unit: mm Low leakage current : IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V (Note 1) ID 15 A Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ TOSHIBA Channel temperature Tch 150 C Weight: 1.5 g (typ.) Storage temperature range Tstg -55~150 C Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.67 C / W Thermal resistance, channel to ambient Rth (ch-a) 83.3 C / W Drain
CA8003-H(0.0066) 36 16 18 2SK2837(0.27) 2SK3117(0.27) 2SK2993(0.105) 2SK3388(0.105) 2SK3445(0.105) 2SK1489(1.0) 12 2SK2915(0.4) 2SJ464(0.09) 2SJ620(0.09) 2SJ349(0.045) 2SJ401(0.045) 2SK2782(0.055) 2SK2699(0.65) 14 2SK2698(0.4)2 2SK3314(0.48) 2SK2382(0.18) 2SK2401(0.18) P TPC8114(0.0045) N TPC8018-H(0.0046) 2SK3236(0.02) 2SK3662(0.0125) 35 2SK2385(0.03) 36 2SK3089(0.03) N TPCA8004-H(0.0046) P TPCA8101-H(0.007) P TPCA8102-H(0.006) P TPCA8103(0.0042) 45 ID(A) 13 2SJ412(0.21) 2SJ619(0.21) 2SK3090(0.02) 2SK3127(0.011) $ 2SK3506(0.02) 1000 2SK2968(1.25) 2SK2916(0.4) TPC8013-H(0.0065) TPC8016-H(0.0055) TPC8017-H(0.0066) 25 600 2SK3743(0.4) 2SK3403(0.4) 2SK3544(0.4) 2SJ304(0.12) 2SJ312(0.12) 2SK2614(0.046) 40 2SK3126(0.65) 2SK3309(0.65) 2SK3310(0.65) 2SK3407(0.65) 2SK2508(0.25) 2SK2598(0.25) 16 35 450 2SK2841(0.55) 2SK2949(0.55) 2SK3499(0.55) TPC8015-H(0.008)] TPC8003(0.007) TPC8009-H(0.01) TPC8107(0.007) TPC8112(0.006) 14 18 400 2SJ201(0.625) 2SK1530(0.625) 2SK3625(0.082) 12 15 300 11 2SJ380(0.21) 13 25
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V (Note 1) ID 15 A Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C DC Drain current JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperat
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) l High forward transfer admittance : |Yfs| = 17 S (typ.) Unit: mm l Low leakage current : IDSS = 100 A (max) (VDS = 200 V) l Enhancement-mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V (Note 1) ID 15 A Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.67 C / W Thermal resistance, channel to ambient Rth (ch-a) 83.3 C / W Drain current DC JEDEC JEIT
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V (Note 1) ID 15 A Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C DC Drain current JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperat
2SK2401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV ) 2SK2401 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS TO-220FL ao smax. Pp 1.32 e Low Drain-Source ON Resistance RDS (ON) = 9.13 Q (Typ.) | / Z = me @ High Forward Transfer Admittance: |Ys,| = 17S (Typ.) i - @ Low Leakage Current : Ipgg = 100 uA (Max.) (Vpg = 200 V) . @ Enhancement-Mode > Vth = 1.5~3.5V (Vpg = 10V, Ip = 1mA) " MAXIMUM RATINGS (Ta = 25C) 280 B 3 ch od de 3 CHARACTERISTIC SYMBOL | RATING | UNIT Ts4g |e |, @ : 1. GATE Drain-Source Voltage Vpss 200 Vv 2. DRAIN (HEAT SINK) 3 Drain-Gate Voltage (Rag = 20kQ) VDGR 200 Vv 3. SOURCE Gate-Source Voltage Vass +20 Vv JEDEC DC I 15 A Drain Current Pul 2 45 A BIAS use DP TOSHIBA _2-10S1B Drain Power Dissipation (Te = 25C)|} Pp 75 WwW Single Pulse Avalanche Energy** EAS 166 mJ . Avalanche Current IAR 15 A Unit in mm Repetitive Avalanche Energy* EAR 7.5 mJ TO
W .C O W W C W . Y W C W . 0 Y W T W . W 0 0 W .T 0 W M .1 .T 00Y 2SK2916(0.4) W.1 Y.COM W WW 00Y.CO .TW W.1 Y.COM W W 14 W W 0 W .T 1 0 W M . .T 1 00 M . O 1 W M . O W 2SK2953(0.4) C 2SK2698(0.4)2 2SK2382(0.18) . O W W C W . Y W W Y W .T 00 2SK3314(0.48) 2SK2401(0.18) W WW .100Y.C M.TW 15 M.T .100 W.1 Y.COM W O W O W W C . W C W . 0 Y W T W . W 0 0 Y W T W M 2SJ412(0.21) .1 2SK2915(0.4) .T 00 M. .10 16 WW 00Y.CO .TW 2SJ619(0.21) W.1 Y.COM W WW 00Y.CO .TW W W W 1 0 W T M . . 1 0 2SJ464(0.09) 2SK2882(0.12) .1 2SK2917(0.27) O W M OM W. 18 2SJ620(0.09) 2SK3387(0.12) WW .100Y.C M.TW WW 00Y.CO .TW WW .100Y.C M.TW W O 1 2SK2837(0.27) W 2SK2391(0.085) M . 2SK2993(0.105) O W O W .C WW .100Y.C M.TW 2SK3117(0.27) 2SK3388(0.105) WW 20 .TW 00Y WW .100Y.C M.TW M 2SK3445(0.105)W.1 O O WW 00Y.CO .TW W C . W C W . Y W W W 0 Y W T 2SK3444(0.082) 2SK1544(0.2) W M .1 .T 00 M. .10 25 OM WW 00Y.CO .TW W.1 Y.C2SK3625(0.082) WW 00Y.CO .TW W W W W 1 0 2SK2314(0.085) W T M . . 1 0 O W 27 OM W. 2SK2789(0.085) OM W.1 WW .1
41 (0.007) TPC8026 (0.0066) TPC8107 (0.007) TPC8112 (0.006) TPC8118 (0.007) 40 50 60 75 100 150 180 200 250 300 400 450 500 2SJ380 (0.21) 2SJ201 (0.625) 2SK1530 (0.625) 2SK3743 (0.4) 2SK3403 (0.4) 2SK3544 (0.4) 2SK2508 (0.25) 2SK2598 (0.25) 2SK2382 (0.18) 2SK2401 (0.18) TPC8032-H (0.0065) 15 NS TPC8A02-H (0.0056) P N N N N N P N NS 18 2SK3935 (0.25) TPC8114 (0.0045) TPC8027 (0.0027) TPC8028 (0.0043) TPC8029 (0.0038) TPC8034-H (0.0035) TPC8042 (0.0034) TPC8117 (0.0039) TPC8036-H (0.0042) TPC8A04-H (0.0036) 2SJ464 (0.12) 2SJ620 (0.09) TPCA8006-H (0.067) 20 2SK2916 (0.4) 2SK3903 (0.44) TK15A50D (0.3) 2SK4107 (0.4) 2SK3314 (0.49) 2SK2953 (0.4) TK15A60U (0.3) TK15D60U (0.3) TK15J60U (0.3) 2SK2915 (0.4) 2SK3905 (0.31) 2SK2391 (0.085) 2SK2993 (0.105) 2SK3445 (0.105) 2SK3994 (0.105) 25 26 2SK3911 (0.32) TK20A60U (0.19) TK20D60U (0.19) TK20J60U (0.19) 2SK3906 (0.33) 2SK3444 (0.082) 2SK3625 (0.082) 2SK2232 (0.046) 2SK2311 (0.046) N TPCA8016-H (0.021) 2SK1544 (0.2) NS TPCA8A02-H (0.0053) N TPCA8039-H (0.005
OM W WW 00Y.CO .TW W W W W M .1 .T 2SJ304(0.12) 2SK2916(0.4) 00 2SK3903(0.44) W.1 Y.COM W WW 00Y.CO .TW 2SJ312(0.12) W.1 Y.COM W W W W W 2SK2382(0.18) .T 00 W 2SK2953(0.4) N TPC8013-H(0.0065) 2SK2698(0.4) W.1 Y.COM W M.T .100 W.1 Y.COM W O W 2SK3314(0.48) 2SK2401(0.18) N TPC8017-H(0.0066) W W C . 0 W .T W 0 W WW .100Y M.T .100 W.1 Y.COM W 2SK3934(0.3) 2SK2915(0.4) M.T O W O W 2SJ412(0.21) W C NS TPC8A02-H(0.0056) . W W Y W W W Y.C W W2SJ619(0.21) M.T .100 M.T .100 O2SK3935(0.25) W M.T .100 O W C . O W W C W .TW 2SK3905(0.31) 00Y WW .100Y. .TW 1 WW .100Y.C M.TW M . M O W O W 2SK2882(0.12) 2SJ464(0.12) P TPC8114(0.0045) O WW .100Y.C M.TW 2SK2917(0.27) WW 02SK3387(0.12) 2SJ620(0.09) W N TPC8018-H(0.0046) Y.C WW .100Y.C M.TW 0 W T . TPCA8006-H(0.067) .1 W O W CO OM W W WW .100Y.2SK3904(0.26) WW .100Y.C M.TW WW .100Y.C M.TW M.T O W O W C . O W .C 2SK3911(0.32) 2SK2837(0.27) WW .100Y 2SK2391(0.085) 2SK2614(0.046) 2SJ349(0.045) .TW WW .100Y2SK2993(0.105) .TW WW .100Y.C M.TW M 2SK3906(0.33) 2SK3117(0.27)
400 450 2SJ201 (0.625) 2SK1530 (0.625) TPC8025 (0.012) TPC8020-H (0.009) TPC8026 (0.0066) TPC8107 (0.007) TPC8112 (0.006) TPC8118 (0.007) 2SK3743 (0.4) 2SK3403 (0.4) 2SK3544 (0.4) 2SK2508 (0.25) 2SK2598 (0.25) 2SJ304 (0.12) 2SJ312 (0.12) 14 2SK2382 (0.18) 2SK2401 (0.18) N TPC8017-H (0.0066) N TPC8032-H (0.0065) 15 16 NS TPC8A02-H (0.0056) 17 N TPC8033-H (0.0053) 18 P N N N N P 700 2SK2699 (0.65) TPC8114 (0.0045) TPC8018-H (0.0046) TPC8027 (0.0027) TPC8028 (0.0043) TPC8029 (0.0038) TPC8117 (0.0039) 2SJ464 (0.12) 2SJ620 (0.09) TPCA8006-H (0.067) 2SK2614 (0.046) 20 2SK4012 (0.4) 2SK3797 (0.43) 2SK4016 (0.5) 2SJ349 (0.045) 2SJ401 (0.045) 2SK2782 (0.055) 2SK2916 (0.4) 2SK3903 (0.44) 2SK3314 (0.49) 2SK3934 (0.3) TK15H50C (0.4) 2SK4107 (0.4) 2SK2953 (0.4) TK15J60T (0.3) 2SK2993 (0.105) 2SK3445 (0.105) 2SK3994 (0.105) 2SK2507 (0.046) 2SK3911 (0.32) 2SK3906 (0.33) TK20D60T (0.19) TK20A60T (0.19) TK20J60T (0.19) 2SK3444 (0.082) 2SK3625 (0.082) 2SK2232 (0.046) 2SK2311 (0.046) N TPCA8016-H (0.021) 25 26 2SK2
2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Unit: mm Low leakage current : IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 k) VDGR 200 V Gate-source voltage VGSS 20 V (Note 1) ID 15 A Pulse (Note 1) IDP 45 A Drain power dissipation (Tc = 25C) PD 75 W Single pulse avalanche energy (Note 2) EAS 166 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.67 C / W Thermal resistance, channel to ambient Rth (ch-a) 83.3 C / W Drain current DC JEDEC JEITA TOSHIB