n PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002DWL-AL6-R 2N7002DWG-AL6-R Package SOT-363 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw Copyright (c) 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-534.C 2N7002DW Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise noted.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1M) VDGR 60 V Continuous 20 Gate Source Voltage VGSS V Non Repetitive(tP<50s) 40 Continuous 300 Drain Current ID mA Pulsed 800 Power Dissipation 200 mW PD Derated Above 25C 1.6 mW/C Junction Temperature TJ + 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute
tching applications FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002DWL-AL6-R 2N7002DWG-AL6-R Package SOT-363 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw Copyright (c) 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-534.B 2N7002DW Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS 1M) Continuous Gate Source Voltage Non Repetitive(tp<50s) Continuous Drain Current Pulsed Power Dissipation Derated Above 25C Junction Temperature Storage Temperature SYMBOL VDSS VDGR VGSS ID PD TJ TSTG RATINGS 60 60 20 40 300 800 200 1.6 + 150 -55 ~ +150 UNIT V V V mA mW mW/C C C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute m