Sr Both Sides 4.3 mw/C ORDERING INFORMATION Maximum Voltages & Currents TO-71 WAFER DICE Vag Gate to Source Voltage ~b0 V 2N5196 | 2N5196/W_| 2N5196/D Vgp Gate to Drain Voltage ~5O0 V 2N5197 | 2N5197/W_| 2N5197/D 1g Gate Current 50 mA 2N5198 | 2N5198/W_| 2N5198/D 2N5199 | 2N5199/W | 2N5199/D 2N5196-2N5199 Monolithic Dual N-Channel JFET 2 op. | =r} ELECTRICAL CHARACTERISTICS (25C unless otherwise specified) PARAMETER MIN MAX UNIT TEST CONDITIONS ! Gate Reverse Current ~% pa Vv 30V,V 0 rr ze ' = = a GSS Reverse Gu 50 | nA Gs DS 160C BVGss Gate-Source Breakdown Voltage -50 ig =-1 uA, Vps=0 VGSioft) Gate-Source Cutoff Voltage -07 4 Vv Vps = 20V, Ip =i nA _ Vos Gate-Source Voltage 0.2 -3.8 . ~15 A Vog = 20 V, Ip = 200 ZA Ig Gate Operating Current 715 mA DG Dd [ C J | loss Saturation Drain Current (Note 1) 0.7 7 mA Vos = 20 V, Ves = 0 Sfs Common-Source Forward Transconductance (Note 1) 1000 4000 Vps = 20 V, VGs =0 fs * Common-Source Forward Transconductance (Note 1} 700 1600 mh Vpg = 20 V, Ip = 200 pA