Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"89(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"89(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Design Resources":"IRL3705NS Saber Model IRL3705NS Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRL3705NS/L","Rds On (Max) @ Id, Vgs":"10 mOhm @ 46A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Other Names":"*IRL3705NS","Package / Ca...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"89A (Tc)","Gate Charge (Qg) @ Vgs":"98nC @ 5V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"10 mOhm @ 46A, 10V","Datasheets":"IRL3705...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Design Resources":"IRL3705NS Saber Model IRL3705NS Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRL3705NS/L","Rds On (Max) @ Id, Vgs":"10 mOhm @ 46A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.8W","Package / Case":"TO-263-3,...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"89A (Tc)","Gate Charge (Qg) @ Vgs":"98nC @ 5V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"10 mOhm @ 46A, 10V","Datasheets":"IRL3705N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55(Min) V","Typical Rise Time":"140 ns","Typical Turn-Off Delay Time":"37 ns","Description":"Value","Maximum Continuous Drain Current":"89 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116 V","Typical Turn-On Delay Time":"12 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"0.01@10V Ohm","Manufacturer":"International Rectifier","Typical Fall Time":"78 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Design Resources":"IRL3705NS Saber Model IRL3705NS Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRL3705NS/L","Rds On (Max) @ Id, Vgs":"10 mOhm @ 46A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.8W","Package / Case":"TO-263-3,...

{"Voltage, Breakdown, Drain to Source":"55 V","Time, Turn-Off Delay":"37 ns","Transconductance, Forward":"50 S","Gate Charge, Total":"98 nC","Voltage, Forward, Diode":"1.3 V","Polarization":"N-Channel","Current, Drain":"89 A","Package Type":"D2Pak","Voltage, Gate to Source":"\u00b116 V","Temperature, Operating, Minimum":"-55 \u00b0C","Power Dissipation":"170 W","Temperature, Operating, Maximum":"+175 \u00b0C","Resistance, Drain to Source On":"0.01 Ohm","Time, Turn-On Delay":"12 ns"}...