Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"150nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"4340pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF1404Z(S,L)","Rds On (Max) @ Id, Vgs":"3.7 mOhm @ 75A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Ma...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Gate Charge (Qg) @ Vgs":"150nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.7 mOhm @ 75A, 10V","Datasheets":"IRF1404Z (S,L) Pb...