VII150-12S2
203 A, 1200 V, N-CHANNEL IGBT

From Zilog

StatusDiscontinued
Additional FeatureHIGH SPEED
Collector Current-Max (IC)203 A
Collector-emitter Voltage-Max1200 V
ConfigurationSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max20 V
JESD-30 CodeR-PUFM-X7
Number of Elements2
Number of Terminals7
Operating Temperature-Max150 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max829 W
Power Dissipation-Max (Abs)829 W
Qualification StatusCOMMERCIAL
Sub CategoryInsulated Gate BIP Transistors
Surface MountNO
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
VCEsat-Max3.7 V

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