VII150-12S2 203 A, 1200 V, N-CHANNEL IGBT
From Zilog
Status | Discontinued |
Additional Feature | HIGH SPEED |
Collector Current-Max (IC) | 203 A |
Collector-emitter Voltage-Max | 1200 V |
Configuration | SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE |
Gate-emitter Voltage-Max | 20 V |
JESD-30 Code | R-PUFM-X7 |
Number of Elements | 2 |
Number of Terminals | 7 |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 829 W |
Power Dissipation-Max (Abs) | 829 W |
Qualification Status | COMMERCIAL |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | NO |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
VCEsat-Max | 3.7 V |