IXTN17N120L
17 A, 1200 V, 0.99 ohm, N-CHANNEL, Si, POWER, MOSFET

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)1500 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1200 V
Drain Current-Max (ID)17 A
Drain-source On Resistance-Max0.9900 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionPLASTIC, SOT-227B, MINIBLOC-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)30 A
Terminal FinishNICKEL
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links