IXFR15N100Q3
10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)1000 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1000 V
Drain Current-Max (ID)10 A
Drain-source On Resistance-Max1.2 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionPLASTIC, ISOPLUS247, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)45 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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