IRFU9120PBF MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.6Ohm; ID -5.6A; TO-251AA; PD 2.5W; VGS +/-20
From Vishay PCS
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Dimensions | 6.73 x 2.39 x 6.22 mm |
| Forward Diode Voltage | -6.3 V |
| Forward Transconductance | 1.5 S |
| Height | 6.22 mm |
| Length | 6.73 mm |
| Maximum Continuous Drain Current | -5.6 A |
| Maximum Drain Source Resistance | 0.6 Ω |
| Maximum Drain Source Voltage | -100 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2.5 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-251AA |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | Maximum of 18 nC @ -10 V |
| Typical Input Capacitance @ Vds | 390 pF @ -25 V |
| Typical Turn On Delay Time | 9.6 ns |
| Typical TurnOff Delay Time | 21 ns |
| Width | 2.39 mm |
