IRF510PBF
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10.51 x 4.65 x 15.49 mm
Forward Diode Voltage2.5 V
Forward Transconductance1.3 S
Height15.49 mm
Length10.51 mm
Maximum Continuous Drain Current5.6 A
Maximum Drain Source Resistance0.54 Ω
Maximum Drain Source Voltage100 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+175 °C
Maximum Power Dissipation43 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +175 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ VgsMaximum of 8.3 nC @ 10 V
Typical Input Capacitance @ Vds180 pF @ 25 V
Typical Turn On Delay Time6.9 ns
Typical TurnOff Delay Time15 ns
Width4.65 mm

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