SI2329DS-T1-GE3 MOSFET P-CH 8V 6A SOT-23
From Vishay Siliconix
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Datasheets | SI2329DS-T1-GE3 |
Drain to Source Voltage (Vdss) | 8V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1485pF @ 4V |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Packaging | Tape & Reel (TR) |
Power - Max | 2.5W |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.3A, 4.5V |
Series | TrenchFET® |
Standard Package | 3,000 |
Supplier Device Package | SOT-23-3 (TO-236) |
Vgs(th) (Max) @ Id | 800mV @ 250µA |