SI2329DS-T1-GE3 MOSFET P-CH 8V 6A SOT-23
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Datasheets | SI2329DS-T1-GE3 |
| Drain to Source Voltage (Vdss) | 8V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1485pF @ 4V |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 2.5W |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.3A, 4.5V |
| Series | TrenchFET® |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
