JANTXV2N6661P
860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD

From Vishay Presicion Group

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min90 V
Drain Current-Max (ID)0.8600 A
Drain-source On Resistance-Max4 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)10 pF
Mfr Package DescriptionTO-39 TOLL LID, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Power Dissipation Ambient-Max0.7250 W
Terminal FinishNOT SPECIFIED
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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