IRFR224TRRPBF
3.8 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

From Vishay Presicion Group

StatusACTIVE
Avalanche Energy Rating (Eas)130 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)3.8 A
Drain-source On Resistance-Max1.1 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, DPAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)15 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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