IRFP250
30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

From Vishay Intertechnology, Inc.

StatusTRANSFERRED
Avalanche Energy Rating (Eas)410 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)30 A
Drain-source On Resistance-Max0.0850 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-247, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)120 A
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links