IRFD210
MOSFET N-CH 200V 600MA 4-DIP

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
DatasheetsIRFD210
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs8.2nC @ 10V
Input Capacitance (Ciss) @ Vds140pF @ 25V
Mounting TypeThrough Hole
Other Names*IRFD210
Package / Case4-DIP (0.300", 7.62mm)
PackagingTube
Power - Max1W
Product Photos4-DIP
Rds On (Max) @ Id, Vgs1.5 Ohm @ 360mA, 10V
Series-
Standard Package2,500
Supplier Device Package4-DIP, Hexdip, HVMDIP
Vgs(th) (Max) @ Id4V @ 250µA

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