IRF630L
MOSFET N-CH 200V 9A TO-262

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C9A (Tc)
DatasheetsIRF630PBF
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs43nC @ 10V
Input Capacitance (Ciss) @ Vds800pF @ 25V
Mounting TypeThrough Hole
Other Names*IRF630L
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
PackagingTube
Power - Max3W
Rds On (Max) @ Id, Vgs400 mOhm @ 5.4A, 10V
Series-
Standard Package50
Supplier Device PackageI2PAK
Vgs(th) (Max) @ Id4V @ 250µA

External links