HXTR6102 Bipolar NPN UHF-Microwave Transisitor
From Various
@Freq. (Hz) (Test Condition) | 4.0G |
@I(C) (A) (Test Condition) | 4.0m |
@V(CE) (V) (Test Condition) | 10 |
Absolute Max. Power Diss. (W) | 300m |
I(C) Abs.(A) Collector Current | 20m |
Military | N |
Noise Figure Max. (dB) | 3.0 |
Package | Micro-X |
Semiconductor Material | Silicon |
V(BR)CBO (V) | 35 |