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Supertex.com/VP0535N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"75 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 19:29:21, 26 November 2024
Documentation and Support
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UTAP002.pdf | 13.79 | 1 | Request | |
6RP0020-2AC32-5AA0.pdf | 15.16 | 1 | Request | |
1BP002_11010_003_DWG.pdf | 0.05 | 1 | Request | |
1BP002_11010_002_DWG.pdf | 0.05 | 1 | Request | |
1BP002_11010_001_DWG.pdf | 0.06 | 1 | Request | |
G_303361P0022.pdf | 0.04 | 1 | Request | |
1VDP002121R0001.pdf | 0.13 | 1 | Request | |
7B6JP00288.pdf | 0.04 | 1 | Request | |
7B6JP00202.pdf | 0.04 | 1 | Request | |
7B6JP00209.pdf | 0.04 | 1 | Request | |
1VDP002394P0001.pdf | 0.08 | 1 | Request | |
4GAADAP002I1000.pdf | 0.04 | 1 | Request |