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Supertex.com/VN0540N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 08:50:13, 30 November 2024
Documentation and Support
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| 1BP008_11014_001_4F_DWG.pdf | 0.12 | 1 | Request | |
| 7GSP008628R0006.pdf | 0.14 | 1 | Request | |
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| 7GSP008555R0006.pdf | 0.15 | 1 | Request |
