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Supertex.com/VN0535N3P013
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 11:36:40, 29 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| 7GSP013152R0006.pdf | 0.07 | 1 | Request | |
| 7GSP013642R0006.pdf | 0.07 | 1 | Request | |
| 7GSP013471R0006.pdf | 0.07 | 1 | Request | |
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| 7GSP013714R0006.pdf | 0.07 | 1 | Request | |
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| 7GSP013355R0006.pdf | 0.08 | 1 | Request | |
| 7GSP013444R0006.pdf | 0.07 | 1 | Request | |
| 7GSP013919R0006.pdf | 0.07 | 1 | Request | |
| 7GSP013450R0006.pdf | 0.07 | 1 | Request | |
| 7GSP013036R0006.pdf | 0.07 | 1 | Request |
