TK10A60D(STA4>> Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220SIS
From Toshiba
Category | MOSFET |
Channel Mode | Enhancement |
Description | Value |
Manufacturer | Toshiba |
Maximum Continuous Drain Current | 10 A |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | ±30 V |
Mounting | Through Hole |
Operating Temperature | -55 to 150 °C |
Package | 3TO-220SIS |
RDS-on | 750@10V mOhm |
Typical Fall Time | 15 ns |
Typical Rise Time | 22 ns |