TK10A60D(STA4,Q,M) MOSFET MOSFET N-ch 600V 10A
From Toshiba
Brand | Toshiba |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 100 ns |
Id - Continuous Drain Current | 10 A |
Manufacturer | Toshiba |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Packaging | Reel |
Pd - Power Dissipation | 45 W |
Product Category | MOSFET |
Qg - Gate Charge | 25 nC |
Rds On - Drain-Source Resistance | 750 mOhms |
Rise Time | 55 ns |
RoHS | Details |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 15 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |