MIG15J855E
Three-Phase Bridge IGBT Power Module

From Toshiba

@I(C) (A) (Test Condition)15
@V(CES) (V) (Test Condition)600
@V(GE) (Test Condition)15
@V(GES) (V) (Test Condition)20
Absolute Max. Power Diss. (W)55
Circuits Per Package1
I(C) Abs.(A) Collector Current15
I(CES) Min. (A)1.0m
I(GES) Max. (A)500n
PackageMODULE-var
V(BR)CES (V)600
V(BR)GES (V)20
V(CE)sat Max.(V)2.8
t(f) Max. (s) Fall time.300n
t(r) Max. (s) Rise time200n

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