2SA1162-Y(TLSPF,T)
Bipolar Transistors - BJT SM SIG POWER TRANS

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 50 V
ConfigurationSingle
DC Collector/Base Gain hfe Min70
DC Current Gain hFE Max400
Emitter- Base Voltage VEBO- 5 V
Factory Pack Quantity3000
Gain Bandwidth Product fT80 MHz
ManufacturerToshiba
Maximum DC Collector Current0.15 A
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseTO-236 MOD
PackagingReel
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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