BC550B A1
Bipolar Transistors - BJT NPN Transistor

From Taiwan Semiconductor

BrandTaiwan Semiconductor
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
DC Collector/Base Gain hfe Min200 at 2 mA at 5 V
DC Current Gain hFE Max450 at 2 mA at 5 V
Emitter- Base Voltage VEBO6 V
Factory Pack Quantity4000
ManufacturerTaiwan Semiconductor
Maximum DC Collector Current200 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleThrough Hole
Package / CaseTO-92-3
PackagingAmmo Pack
Pd - Power Dissipation500 mW
Product CategoryBipolar Transistors - BJT
Transistor PolarityNPN

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