Product Details Search Results:
Toshiba.co.jp/TK10A60DSTA4QM
{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"22 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"3TO-220SIS","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b130 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"750@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"15 ns"}...
1279 Bytes - 19:59:51, 15 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TK10A60D.pdf | 0.18 | 1 | Request |
