VQ1000N7
0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Supertex, Inc.

StatusDiscontinued
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (Abs) (ID)0.5000 A
Drain Current-Max (ID)0.2250 A
Drain-source On Resistance-Max5.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
JESD-30 CodeR-CDIP-T14
JESD-609 Codee0
Mfr Package DescriptionCERAMIC, DIP-14
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleIN-LINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)2 W
Pulsed Drain Current-Max (IDM)1 A
Qualification StatusCOMMERCIAL
Sub CategoryFET General Purpose Power
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)10 ns
Turn-on Time-Max (ton)10 ns

External links