VP5225K4
0.645 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

From Supertex, Inc.

StatusDiscontinued
Additional FeatureLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)0.6450 A
Drain-source On Resistance-Max3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252AA
JESD-30 CodeR-PSSO-G2
JESD-609 Codee0
Mfr Package DescriptionDPAK-3
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Pulsed Drain Current-Max (IDM)3 A
Qualification StatusCOMMERCIAL
Surface MountYES
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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