VP2450N8-G
0.16 A, 500 V, 30 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA

From Supertex, Inc.

StatusActive
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)0.1600 A
Drain-source On Resistance-Max30 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-243AA
JESD-30 CodeR-PSSO-F3
JESD-609 Codee3
Mfr Package DescriptionGREEN PACKAGE-3
Moisture Sensitivity Level1
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Pulsed Drain Current-Max (IDM)0.8000 A
Qualification StatusCOMMERCIAL
REACH CompliantYes
Surface MountYES
Terminal FinishMATTE TIN
Terminal FormFLAT
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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