VP0116ND
160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Supertex, Inc.

StatusDiscontinued
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min160 V
Drain-source On Resistance-Max25 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)10 pF
JESD-30 CodeS-XUUC-N3
JESD-609 Codee0
Mfr Package DescriptionDIE-3
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleUNCASED CHIP
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Qualification StatusCOMMERCIAL
Sub CategoryOther Transistors
Surface MountYES
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionUPPER
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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