LND150ND
30 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Supertex, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)0.0300 A
Drain-source On Resistance-Max1000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)1 pF
Mfr Package DescriptionDIE
Number of Elements1
Number of Terminals3
Operating ModeDEPLETION
Package Body MaterialUNSPECIFIED
Package ShapeUNSPECIFIED
Package StyleUNCASED CHIP
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionUPPER
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links