2N3649M Silicon Controlled Rectifier
From STMicroelectronics
@I(T) (A) (Test Condition) | 25 |
@Temp. (°C) (Test Condition) | 120 |
I(D) Max. (A) Leakage Current | 6.0m |
I(GT) Max. (A) | 500m |
I(H) Max.(A) Holding Current | 350m |
I(T) Max.(A) On-state Current | 16 |
I(TSM) Max. (A) | 180 |
Military | N |
Package | TO-208AA |
V(DRM) Max.(V)Rep.Pk.Off Volt. | 50 |
V(GT) Max.(V) | 4.5 |
V(T) Max. (V) | 2.0 |
dv/dt Min. (V/us) | 200 |
t(q) Typ. (s) | 15u |