CKV2010-19-325-011
UHF-S BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

From Skyworks Solutions, Inc.

StatusACTIVE
Breakdown Voltage-Min22 V
ConfigurationSINGLE
Diode Capacitance Ratio-Min4.5
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandULTRA HIGH FREQUENCY TO S BAND
Mfr Package DescriptionHERMETIC SEALED, CERAMIC PACKAGE-2
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeSQUARE
Package StyleMICROWAVE
Power Dissipation Limit-Max0.2500 W
Quality Factor-Min500
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Variable Capacitance Diode ClassificationHYPERABRUPT

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