PMBT2222AT/R Si NPN LP HF BJT
From Philips Semiconductors / NXP Semiconductors
| @Freq. (Hz) (Test Condition) | 1M |
| @I(B) (A) (Test Condition) | 15m |
| @I(C) (A) (Test Condition) | 1m |
| @V(CBO) (V) (Test Condition) | 60 |
| @V(CE) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 250m |
| C(obo) (Max) (F) | 8.0p |
| I(C) Abs.(A) Collector Current | 600m |
| I(CBO) Max. (A) | 10u |
| Military | N |
| Package | SOT-23 |
| V(BR)CBO (V) | 75 |
| V(BR)CEO (V) | 40 |
| V(CE)sat Max.(V) | 300m |
| f(T) Min. (Hz) Transition Freq | 300M |
| h(FE) Min. Static Current Gain | 40 |
| h(fe) Min. SS Current gain. | 50 |
| t(d) Max. (s) Delay time. | 10n |
| t(f) Max. (s) Fall time. | 60n |
| t(off) Max. (s) Turn-Off Time | 285n |
| t(on) Max. (s) Turn-On Time | 35n |
| t(r) Max. (s) Rise time | 25n |
| t(s) Max. (s) Storage time. | 225n |
