BSP110T/R N-Channel Enhancement MOSFET - DMOS, High-speed switching, phone appl.
From Philips Semiconductors / NXP Semiconductors
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 200m |
| @V(DS) (V) (Test Condition) | 15 |
| Absolute Max. Power Diss. (W) | 1.5 |
| C(iss) Max. (F) | 30p |
| I(D) Abs. Drain Current (A) | 325m |
| I(DSS) Min. (A) | 1.0u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | SOT-223 |
| V(BR)DSS (V) | 100 |
| V(BR)GSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | 150m |
| g(fs) Min. (S) Trans. conduct. | 75m |
| r(DS)on Max. (Ohms) | 4.5 |
