BFS17WT/R
Bipolar NPN UHF-Microwave Transisitor

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1M
@I(C) (A) (Test Condition)25m
@V(CE) (V) (Test Condition)5
Absolute Max. Power Diss. (W)300m
C(obo) (Max) (F)1.5p
I(C) Abs.(A) Collector Current50m
MilitaryN
PackageSOT-323
Semiconductor MaterialSilicon
V(BR)CBO (V)25
V(BR)CEO (V)15
f(T) Min. (Hz) Transition Freq1.6G
h(FE) Max. Current gain.90
h(FE) Min. Static Current Gain25

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