BFS17AT/R
Bipolar NPN UHF-Microwave Transisitor

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)800M
@I(C) (A) (Test Condition)2.0m
@V(CBO) (V) (Test Condition)10
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)300m
I(C) Abs.(A) Collector Current25m
I(CBO) Max. (A)50n
MilitaryN
Noise Figure Max. (dB)2.5
PackageSOT-23
Power Gain Min. (dB)13
V(BR)CBO (V)25
V(BR)CEO (V)15
f(T) Min. (Hz) Transition Freq2.8G
h(FE) Max. Current gain.150
h(FE) Min. Static Current Gain20

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