BCV26T/R PNP Darlington Transistor
From Philips Semiconductors / NXP Semiconductors
| @I(C) (A) (Test Condition) | 100m |
| @V(CBO) (V) (Test Condition) | 30 |
| @V(CE) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 300m |
| I(C) Abs.(A) Collector Current | 500m |
| I(CBO) Max. (A) | 100n |
| Military | N |
| Package | TO-236 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 40 |
| V(BR)CEO (V) | 30 |
| V(CE)sat Max.(V) | 1.0 |
| f(T) Min. (Hz) Transition Freq | 200M |
| h(FE) Min. Static Current Gain | 20k |
