BC856AT/R
Si PNP Lo-Pwr BJT

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1.0M
@I(B) (A) (Test Condition)5.0m
@I(C) (A) (Test Condition)10m
@V(CB) (V) (Test Condition)10
@V(CBO) (V) (Test Condition)30
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)300m
C(obo) (Max) (F)4.5p
I(C) Abs.(A) Collector Current100m
I(CBO) Max. (A)15n
MilitaryN
PackageTO-236AA
V(BR)CBO (V)80
V(BR)CEO (V)65
V(CE)sat Max.(V).65
f(T) Min. (Hz) Transition Freq100M
h(FE) Max. Current gain.250
h(FE) Min. Static Current Gain125

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