BC847CT/R Bipolar NPN UHF-Microwave Transisitor
From Philips Semiconductors / NXP Semiconductors
@Freq. (Hz) (Test Condition) | 1.0M |
@I(C) (A) (Test Condition) | 200u |
@V(CBO) (V) (Test Condition) | 30 |
@V(CE) (V) (Test Condition) | 5.0 |
Absolute Max. Power Diss. (W) | 300m |
C(obo) (Max) (F) | 4.5p |
I(C) Abs.(A) Collector Current | 100m |
I(CBO) Max. (A) | 15n |
Military | N |
Noise Figure Max. (dB) | 10 |
Package | TO-236AA |
Semiconductor Material | Silicon |
V(BR)CBO (V) | 50 |
V(BR)CEO (V) | 45 |
f(T) Min. (Hz) Transition Freq | 100M |
h(FE) Max. Current gain. | 800 |
h(FE) Min. Static Current Gain | 420 |