1N5649C Bidirectional Transient Suppressor
From Semicon Components, Inc.
| @I(PP) (A) (Test Condition) | 22.2 |
| @I(R) (A) (Test Condition) | 1m |
| I(FSM) Max.(A) Pk.Fwd.Sur.Cur. | 200 |
| I(RM) Max.(A) Reverse Current | 5u |
| Military | N |
| P(D) Max.(W) Power Dissipation | 1 |
| Package | DO-13 |
| Semiconductor Material | Silicon |
| V(BR) Max.(V)Breakdown Voltage | 51.7 |
| V(BR) Min.(V)Breakdown Voltage | 42.3 |
| V(BR) Nom.(V)Rev.Break.Voltage | 47 |
| V(C) Nom. (V) Clamping Voltage | 67.8 |
| V(RWM) (V) Work.Pk.Rev.Voltage | 38.1 |
| t(resp) Max.(s) Response Time | 5n |
