2N6660C4A-JQRS.GCDE 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Semelab Plc.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 1 A |
| Drain-source On Resistance-Max | 3 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 10 pF |
| Mfr Package Description | HERMETIC SEALED PACKAGE-18 |
| Number of Elements | 1 |
| Number of Terminals | 18 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Power Dissipation Ambient-Max | 0.7000 W |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | QUAD |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
