KM416V1204CT-L45
Pseudo-Static Dynamic RAM - Extended Data Out , 1k refresh

From Samsung Electronics

Bits Per Word16
Nom. Supp (V)3.3
Number of Words1M
Output Config3-State
P(D) Max.(W) Power Dissipation1.0
PackageTSOP-44/50
Pins50
TechnologyCMOS
t(acc) Max. (S)45n
tW Min (S)79n

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