K8C5515EBM-FE1F 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA167
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Time-Max (tACC) | 100 ns |
| Memory Density | 2.68E8 deg |
| Memory IC Type | FLASH 1.8V PROM |
| Memory Width | 16 |
| Mfr Package Description | 10.5 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-167 |
| Number of Functions | 1 |
| Number of Terminals | 167 |
| Number of Words | 1.68E7 words |
| Number of Words Code | 16M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -25 Cel |
| Organization | 16M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 1.95 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
