K8C5515EBM-DC1F
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA167

From Samsung Semiconductor Division

StatusACTIVE
Access Time-Max (tACC)100 ns
Memory Density2.68E8 deg
Memory IC TypeFLASH 1.8V PROM
Memory Width16
Mfr Package Description10.5 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-167
Number of Functions1
Number of Terminals167
Number of Words1.68E7 words
Number of Words Code16M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization16M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)1.95 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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